utc S8550 pnp epitaxial silicon transistor utc unisonic technologies co., ltd. 1 qw-r201-014,a low voltage high current small signal pnp transistor description the utc S8550 is a low voltage high current small signal pnp transistor, designed for class b push-pull audio amplifier and general purpose applications. features *collector current up to 700ma *collector-emitter voltage up to 20 v *complementary to utc s8050 to-92 1 1:emitter 2:base 3: collector absolute maximum ratings (ta=25 c, unless otherwise specified) parameters symbol value unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v collector dissipation(ta=25 c ) pc 1 w collector current ic -700 ma junction temperature t j 150 c storage temperature t stg -65 ~ +150 c electrical characteristics (ta=25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo ic=-100 a,i e =0 -30 v collector-emitter breakdown voltage bv ceo ic=-1ma,i b =0 -20 v emitter-base breakdown voltage bv ebo i e =-100 a,ic=0 -5 v collector cut-off current i cbo v cb =-30v,i e =0 -1 a emitter cut-off current i ebo v eb =-5v,ic=0 -100 na dc current gain(note) hfe 1 hfe2 hfe3 v ce =-1v,ic=-1ma v ce =-1v,ic=-150 ma v ce =-1v,ic=-500ma 100 120 40 110 400 collector-emitter saturation voltage v ce (sat) ic=-500ma,i b =-50ma -0.5 v base-emitter saturation voltage v be (sat) ic=500ma,i b =-50ma -1.2 v base-emitter saturation voltage v be v ce =-1v,ic=-10ma -1.0 v current gain bandwidth product f t v ce =-10v,ic=-50ma 100 mhz output capacitance cob v cb =10v,i e =0 f=1mhz 9.0 pf
utc S8550 pnp epitaxial silicon transistor utc unisonic technologies co., ltd. 2 qw-r201-014,a classification of hfe2 rank c d e range 120-200 160-300 280-400 typical performance characteristics fig.1 static characteristics collector-emitter voltage ( v) ic,collector current (ma) 0 0.4 0.8 1.2 1.6 2.0 0 0.1 0.2 0.3 0.4 0.5 i b =0.5ma i b =1.0ma i b =1.5ma i b =2.0ma i b =2.5ma i b =3.0ma fig.2 dc current gain ic,collector current (ma) h fe , dc current gain 10 2 10 1 10 0 10 3 10 3 10 2 10 1 10 0 10 -1 v ce =1v fig.3 base-emitter on voltage 10 -1 10 0 10 1 10 2 ic,collector current (ma) base-emitter voltage (v) 0 0.2 0.4 0.6 0.8 1.0 v ce =1v ic,collector current (ma) 10 3 10 2 10 1 10 0 10 -1 saturation voltage (mv) 10 1 10 2 10 3 10 4 fig.4 saturation voltage fig.5 current gain-bandwidth product fig.6 collector output capacitance v ce (sat) v be (sat) ic=10*i b ic,collector current (ma) 10 0 10 1 10 2 10 3 current gain-bandwidth product,f t (mhz) 10 0 10 1 10 2 v ce =10v collector-base voltage (v) cob,capacitance (pf) 10 3 10 3 10 0 10 1 10 2 10 0 10 1 10 2 10 3 f=1mhz i e =0 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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